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| AOL1412 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AOL1412 is Pb-free (meets ROHS & Sony 259 specifications). AOL1412L is a Green Product ordering option. AOL1412 and AOL1412L are electrically identical. TM Features VDS (V) = 30V ID =85A (VGS = 10V) RDS(ON) < 3.9m (VGS = 10V) RDS(ON) < 4.6m (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested Fits SOIC8 footprint ! G S D Ultra SO-8 Top View D S Bottom tab connected to drain G Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Continuous Drain Current H Avalanche Current C Repetitive avalanche energy L=0.3mH C TC=25C Power Dissipation B Power Dissipation A Maximum 30 12 85 84 200 27 21 40 240 100 50 5 3 -55 to 175 Units V V A TC=25C I TC=100C TA=25C TA=70C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG A A mJ W W C TC=100C TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Case Symbol t 10s Steady-State Steady-State RJA RJC Typ 19.6 50 1 Max 25 60 1.5 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOL1412 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=1mA, V GS=0V VDS=24V, VGS=0V TJ=125C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C 1.4 200 3.2 5.0 3.8 112 0.4 0.5 85 6430 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 756 352 0.9 96 VGS=10V, VDS=15V, ID=20A 44 17 13 17.5 VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=300A/s 10 56 10.5 20 26 25 1.4 115 53 nC nC nC ns ns ns ns ns nC 7716 3.9 6.2 4.6 1.8 Min 30 0.008 9 0.1 20 0.1 2.4 Typ Max Units V mA A V A m m S V A pF pF pF STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/s A: The value of RJA is measured with the device in a still air environment with T A =25C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150C, using t 10s junction-to-ambient thermal resistance. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The RJA is the sum of the thermal impedence from junction to case R and case to ambient. JC E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assumin a maximum junction temperature of TJ(MAX)=175C. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper. I. The maximum current rating is limited by bond-wires. Rev1: June 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOL1412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 180 10V 150 4.5V 120 ID (A) 90 60 30 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 5 Normalized On-Resistance 2 VGS=4.5V 1.8 1.6 1.4 1.2 1 0.8 0 5 10 15 20 25 30 0 30 60 90 120 150 180 210 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 10 ID=20A 8 RDS(ON) (m) IS (A) 1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 25C 2 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 125C 125C 25C Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V ID=20A VGS=10V VGS=3.5V ID(A) 20 15 10 25C 5 0 1 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 125 6V 25 30 VDS=5V 4 RDS(ON) (m) 3 VGS=10V 2 1 6 4 Alpha & Omega Semiconductor, Ltd. AOL1412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 20 40 60 80 100 Qg (nC) Figure 7: Gate-Charge Characteristics 12000 10000 Capacitance (pF) VDS=15V ID=20A 8000 6000 4000 Crss 2000 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Coss Ciss 1000.0 10s 100.0 ID (Amps) 10.0 1.0 0.1 0.0 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 100 TJ(Max)=175C TC=25C RDS(ON) limited 100 Power (W) 1ms 0.1s DC 10ms 200 180 160 140 120 100 80 0.01 TJ(Max)=175C TC=25C 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) 0.1 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJc .RJc RJC=1.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 PD Ton T 10 100 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOL1412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 250 ID(A), Peak Avalanche Current 200 150 100 50 0 1.0E-07 TC=150C Power Dissipation (W) 110 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 T CASE (C) Figure 13: Power De-rating (Note B) TC=25C 1.0E-06 1.0E-05 1.0E-04 1.0E-03 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 100 80 Power (W) 60 40 20 0 0 25 50 75 100 125 150 175 T CASE (C) Figure 14: Current De-rating (Note B) 100 80 60 40 20 0 0.001 TJ(Max)=150C TA=25C Current rating ID(A) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure15: Single Pulse Power Rating Junction-toAmbient (Note G) 10 ZJA Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=60C/W 0.01 0.1 1 PD Ton T 100 1000 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) Alpha & Omega Semiconductor, Ltd. AOL1412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 1.0E-02 VDS=24V IR (A) 1.0E-03 1.0E-04 1.0E-05 1.0E-06 100 150 200 Temperature (C) Figure 17: Diode Reverse Leakage Current vs. Junction Temperature 70 60 50 Qrr (nC) 40 30 20 10 0 0 5 10 15 20 25 30 4 Is (A) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 60 125C 50 40 Qrr (nC) 30 20 10 0 0 Irm 200 400 600 800 Qrr Is=20A 25C 125C 25C 8 7 6 Irm (A) 5 4 3 2 1 0 1000 trr (ns) 35 30 25 20 15 10 5 0 0 200 400 600 800 0 1000 125C 25C 25C trr S 1 125C Is=20A Irm Qrr 125C 6 di/dt=800A/us 125C 7 25C Irm (A) trr (ns) 20 15 10 5 25C 0 0 5 10 15 20 25 30 Is (A) Figure 20: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current 3 trr 8 25 0 50 VSD(V) VDS=12V 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 100 150 200 Temperature (C) Figure 18: Diode Forward voltage vs. Junction Temperature di/dt=800A/us 125C 3 2.5 2 25C 1.5 S 125C 1 0.5 0 50 IS=1A 5A 20A 10A 25C 5 2 S di/dt (A) Figure 21: Diode Reverse Recovery Charge and Peak Current vs. di/dt di/dt (A) Figure 22: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt Alpha & Omega Semiconductor, Ltd. 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